Paper Title
Luminescence Lifetime Measurement on Gaas Material for Optoelectronic Devices
Abstract
The paper presents the lifetime measurement on GaAs material for optoelectronic devices. The energy dispersion
of GaAs is considered for analyzing the material characteristics and Fermi-dirac function for that material for performance
evaluation for optoelectronic devices. And then we investigated the energy bandgap of GaAs, Si, and Geas a function of
temperature for confirmation. The lifetime measurements for GaAs material with 2.32-2.42eV with 267nm and 400nm
wavelength and 2.53-2.63eV with 267nm and 400nm wavelength with time-resolved photoluminescence measurement with
the help of MATLAB are analyzed in this paper. The simulation results have been confirmed by the experimental results for
measurements.
Index terms - Lifetime Measurement, GaAs Material, Optoelectronic Devices, MATLAB, Band Structure Engineering,
Fermi-Dirac Function.